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ST2310DHI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s
s s s s s
NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS
2 1
3
APPLICATIONS: s HORIZONTAL DEFLECTION HIGH END TVS DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
RBE =32
Typ.
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj April 2003 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 12 25 7 55 2500 -65 to 150 150 Unit V V V A A A W V
o o
C C 1/6
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ST2310DHI
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I EBO V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 1500 V V CE = 1500 V V EB = 4 V I E = 800 mA T J = 125 o C 70 7 Min. Typ. Max. 1 2 210 Unit mA mA mA V
V CE(sat) V BE(sat) h FE
IC = 7 A IC = 7 A IC = 1 A IC = 7 A IC = 7 A IC = 5 A I B(on) = 0.9 A L BB(off) = 1.9 H
I B = 1.75 A I B = 1.75 A V CE = 5 V V CE = 1 V V CE = 5 V f = 32 KHz V BE(off) = -2.5 V (see figure 1) 15 5 5.5 2 0.25 1.5
3 1.1
V V
8.5 2.5 0.5 2.2 s s V
ts tf Vf
INDUCTIVE LOAD Storage Time Fall Time
Diode Forward Voltage I C = 7 A
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
2/6
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ST2310DHI
Derating Curve Output Characteristics
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
DC Current Gain
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ST2310DHI
Power Losses Switching Time Inductive Load
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit.
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ST2310DHI
ISOWATT218 NARROW LEADS MECHANICAL DATA
DIM. A C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP.
MIN. 5.35 3.30 2.90 1.88 0.75 0.75 1.50 1.90 10.80 15.80
MAX. 5.65 3.80 3.10 2.08 0.95 0.95 1.70 2.10 1.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3
MIN. 0.211 0.130 0.114 0.074 0.030 0.030 0.059 0.075 0.425 0.622
MAX. 0.222 0.150 0.122 0.082 0.037 0.037 0.067 0.083 0.043 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091
9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 4.6 3.5 3.7 0.138 0.819 0.752 0.898 1.594 0.191 0.797 0.083
0.354
0.181 0.146
- Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m
P025C/B
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ST2310DHI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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